Maskless photolithography devices, methods, and systems

ABSTRACT

A device includes a light source and a light guide. The light source is configured to emit photoresist-curative electromagnetic radiation. The light guide is arranged to receive the photoresist-curative electromagnetic radiation from the light source and to guide the received radiation by total internal reflection, the light guide including a pattern of emission points on at least one surface of the light guide, the emission points emitting the photoresist-curative electromagnetic radiation out of the light guide by frustration of total internal reflection caused by the emission points.

RELATED APPLICATIONS

This application Continuation of U.S. patent application Ser. No.17/041,756, filed Mar. 27, 2019, entitled “MASKLESS PHOTOLITHOGRAPHYDEVICES, METHODS AND SYSTEMS, which is a US National Phase of and claimspriority to International Application Serial No. PCT/US2019/024434,filed Mar. 27, 2019, entitled “MASKLESS PHOTOLITHOGRAPHY DEVICES,METHODS AND SYSTEMS,” which claims priority to U.S. ProvisionalApplication Ser. No. 62/648,780 filed Mar. 27, 2018, entitled “MASKLESSPHOTOLITHOGRAPHY DEVICES, METHODS AND SYSTEMS,” incorporated byreference herein in its entirety.

FIELD OF DISCLOSURE

Systems and methods are described for general illumination fordisplaying illuminable patterns using maskless photography.

BACKGROUND

Photolithography is commonly used to produce semiconductors andnanoscale devices. The process generally involves the application,exposure and development of a photoresist that has been applied to thesurface of a substrate, such as a silicon wafer. The exposure step inthe photolithography process requires the application of aphotoresist-curative light pattern to the surface of the photoresist tocure portions of the photoresist which have been exposed to thephotoresist-curative. The light exposed photoresist is then developed tocreate patterned photoresist with voids therein. The patternedphotoresist facilitates further processing such as the deposition oftarget materials such as dopant, metal, or metal oxide. Thephotoresist-curative light is often ultraviolet, which is used toselectively contact the photoresist-coated surface via the use of awriting beam, a projected image, or exposure through a patternedphotomask.

A limitation in building devices that contain multiple layers ofmaterial deposited by photolithography is registration between layersand registration area limitations, i.e. the inability to accuratelyregister features across a wide area. Typically a new layer of a devicebeing built should have features registered with corresponding featureson the currently top layer of the device. For example, according to oneprocess, a registration limitation would be needed to cap a sub-micronscale optical feature with a metallic layer formed thereon, whichrequires the application and patterning of a photoresist that accuratelycreates a void above the area to be metalized. Features of the metalliclayer should be registered with corresponding features of the sub-micronscale optical feature over the entire area of the device.

SUMMARY

According to the inventive concepts disclosed herein there is provided adevice. The device includes a light source and a light guide. The lightsource is configured to emit photoresist-curative electromagneticradiation. The light guide is arranged to receive thephotoresist-curative electromagnetic radiation from the light source andto guide the received radiation by total internal reflection, the lightguide including a pattern of emission points on at least one surface ofthe light guide, the emission points emitting the photoresist-curativeelectromagnetic radiation out of the light guide by frustration of totalinternal reflection caused by the emission points.

According to an aspect of the inventive concepts disclosed herein, thephotoresist-curative electromagnetic radiation is ultraviolet (UV)light.

According to an aspect of the inventive concepts disclosed herein, theemission points comprise a light diffusing layer or a lens imprinted onthe at least one surface of the light guide.

According to an aspect of the inventive concepts disclosed herein, thedevice further includes a photoresist disposed on a first surface of thelight guide, the emission points formed on the first surface, whereinportions of the photoresist material are cured by thephotoresist-curative electromagnetic radiation emitted at the emissionpoints. According to an aspect of the inventive concepts disclosedherein, the photoresist has an index of refraction less than that of thelight guide so that the photoresist acts as an optical cladding tototally internally reflect the photoresist-curative electromagneticradiation at the interface between the light guide, other than at theemission points, and the photoresist.

According to an aspect of the inventive concepts disclosed herein, theemission points include a roughened surface of the at least one surface.

According to an aspect of the inventive concepts disclosed herein, theemission points include an implanted region of the at least one surface.

According to an aspect of the inventive concepts disclosed herein, theemission points include a deposited light diffusing region adjacent theat least one surface.

According to an aspect of the inventive concepts disclosed herein, thedeposited light diffusing region includes a metal oxide.

According to an aspect of the inventive concepts disclosed herein, thelight source is arranged to the inject the photoresist-curativeelectromagnetic radiation into an edge of the light guide.

According to an aspect of the inventive concepts disclosed herein, thedevice further includes a photoresist disposed on a first surface of thelight guide, the emission points formed on a second surface of the lightguide opposite to the first surface, wherein portions of the photoresistmaterial are cured by the photoresist-curative electromagnetic radiationemitted at the emission points.

According to the inventive concepts disclosed herein there is provided adevice. The device includes a light source and a light guide. The lightsource is configured to emit photoresist-curative electromagneticradiation. The light guide is arranged to receive thephotoresist-curative electromagnetic radiation from the light source andto guide the received radiation by total internal reflection, the lightguide including a film on at least one surface of the light guide, thefilm having a pattern of emission points, the emission points emittingthe photoresist-curative electromagnetic radiation out of the lightguide by frustration of total internal reflection caused by the emissionpoints.

According to an aspect of the inventive concepts disclosed herein, thephotoresist-curative electromagnetic radiation is ultraviolet (UV)light. According to an aspect of the inventive concepts disclosedherein, the film has an index of refraction less than that of the lightguide so that the film acts as an optical cladding to totally internallyreflect the photoresist-curative electromagnetic radiation at theinterface between the film, other than at the emission points, and thefilm.

According to an aspect of the inventive concepts disclosed herein, thedevice further includes a photoresist disposed on a first surface of thelight guide, the emission points formed on the film on the firstsurface, wherein portions of the photoresist material are cured by thephotoresist-curative electromagnetic radiation emitted at the emissionpoints.

According to an aspect of the inventive concepts disclosed herein, thedevice further includes a photoresist disposed on a first surface of thelight guide, the emission points formed on the film on a second surfaceof the light guide opposite to the first surface, wherein portions ofthe photoresist material are cured by the photoresist-curativeelectromagnetic radiation emitted at the emission points.

According to an aspect of the inventive concepts disclosed herein, thelight source is arranged to the inject the photoresist-curativeelectromagnetic radiation into an edge of the light guide.

According to the inventive concepts disclosed herein there is provided amethod for exposing photoresist to photoresist-curative electromagneticradiation. The photoresist is disposed on a first surface of a lightguide, the light guide having a pattern of emission points.Photoresist-curative electromagnetic radiation is injected into thelight guide such that the photoresist-curative electromagnetic radiationis guided within the light guide by total internal reflection, theemission points emitting the photoresist-curative electromagneticradiation into the photoresist by frustration of total internalreflection caused by the emission points. The photoresist is developedto form a patterned photoresist.

According to an aspect of the inventive concepts disclosed herein, thephotoresist-curative electromagnetic radiation is injected into an edgeof the light guide.

According to an aspect of the inventive concepts disclosed herein, thephotoresist-curative electromagnetic radiation is ultraviolet (UV)light.

According to an aspect of the inventive concepts disclosed herein, theemission points comprise a light diffusing layer or a lens imprinted onthe first surface of the light guide.

According to an aspect of the inventive concepts disclosed herein, themethod further comprises forming a patterned reflective layer on thelight guide using the patterned photoresist.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations of the inventive concepts disclosed herein may be betterunderstood when consideration is given to the following detaileddescription thereof. Such description makes reference to the includeddrawings, which are not necessarily to scale, and in which some featuresmay be exaggerated and some features may be omitted or may berepresented schematically in the interest of clarity. Like referencenumerals in the drawings may represent and refer to the same or similarelement, feature, or function. In the drawings:

FIG. 1A is side view of an illumination device according to theinventive concepts disclosed herein.

FIG. 1B is a top view of the illumination device of FIG. 1A.

FIG. 2A is side view of a device providing emission of photo-curativeelectromagnetic radiation with emission points according to theinventive concepts disclosed herein.

FIG. 2B is side view of a device providing emission of photo-curativeelectromagnetic radiation with emission points and a patternedphotoresist according to the inventive concepts disclosed herein.

FIG. 3 is side view of a device providing emission of photo-curativeelectromagnetic radiation with emission points on a film on a lightguide according to the inventive concepts disclosed herein.

FIG. 4 is a comparative example of a device without emission points.

FIG. 5 is a comparative example of a device without emission points witha film on the light guide.

FIG. 6 is side view of a device providing emission of photo-curativeelectromagnetic radiation with emission points on a light guide bottomsurface according to the inventive concepts disclosed herein.

FIG. 7 is side view of a device providing emission of photo-curativeelectromagnetic radiation with emission points on a film on a lightguide bottom surface according to the inventive concepts disclosedherein.

FIG. 8 is side view of an illuminating device with a reflecting filmformed on a patterned photoresist illustrating a method step accordingto the inventive concepts disclosed herein.

DETAILED DESCRIPTION

According to at least one embodiment, an optical substrate with alight-emitting surface pattern is deployed to enable masklessphotolithography, which eliminates some registration limitations whileproviding the ability to register nanoscale features across a wide area,for example areas greater than 500 square inches. For example, themaskless photolithography may include providing a pattern on the opticalsubstrate, and introducing photo-curative light into the substrate toselectively expose a photoresist to photo-curative light based on thepattern on the optical substrate.

The optical substrate may be part of displays that emit light, includingultra-high definition displays, multi-layer displays, and displays thatfeature transparent illumination. The optical substrate may be part of ananoscale electronic device, as another example.

The display formed may be, for example, a one-way see-throughillumination device which may be formed according to at least oneembodiment. FIG. 1A is a side view illustrating a one-way see-throughillumination device 100 formed by a method according to at least oneembodiment. FIG. 1B is a top view of the one-way see-throughillumination device 100 of FIG. 1A. The illumination device 100 includesa light guide 110, a light source 130, and a pattern of pixels 120 on asurface 140 of the light guide 110. Each the pattern of pixels 120includes a light diffusing layer 124 and a light reflecting layer 122.The illumination device 100 further includes a surface 142 of the lightguide opposite to the surface 140. The surface 140 may be referred to asthe front surface, while the surface 142 may be referred to as the backsurface.

Some of the light, but not all, originally emitted from the light source130 is ultimately directed to the back surface 142 and exits the backsurface 142. On the other hand, light originally emitted from the lightsource 130 which is directed to the front surface 140 is totallyinternally reflected and does not exit the front surface 140. Thus, theeye 150 of a viewer which is on the side of the back surface 142 is ableto view light originating from the light source 130 and injected intothe light guide 110. On the other hand, the eye 150 of a viewer, if theeye 150 is on the side of the front surface 140, is not able to viewlight originating from the light source 130 and injected into the lightguide 110. Thus, the light originating from the light source 130 andinjected into the light guide 110 appears to be invisible from the frontsurface 140.

A light ray 132 is emitted from the light source 130 and directed intothe light guide 110 at an angle such that the light ray 132 impinging onthe front surface 140 or back source 142 undergoes total internalreflection, and the light ray 132 stays within the light guide 110. Thelight diffusing layer 124 may be chosen to be made of a light diffusingmaterial which has an index of refraction such that when the light ray132 originally emitted from the light source 130 impinges on the lightdiffusing layer 124, total internal reflection does not occur, and thelight ray 132 is transmitted into the light diffusing layer 124. Thelight ray 132 transmitted into the light diffusing layer 124 is diffusedand impinges on the light reflecting layer 122, where the light ray 132is reflected back into the light diffusing layer 124 and is furtherdiffused. The reflected and diffused light from the light diffusinglayer 124 then exits the light diffusing layer 124, and impacts the backsurface 142 at less than the critical angle such that the light exitsthe light guide 110, and can be seen.

The one-way see-through illumination device 100 may be formed usingmaskless techniques according to at least one embodiment.

According to at least one embodiment, a device is provided for theemission of photoresist-curative electromagnetic radiation byfrustration of total internal reflection in an optical substrate, alight guide, caused by a pattern of emission points. At the pattern ofemission points, the photoresist-curative electromagnetic radiationchanges direction so that it may impinge upon a photoresist as part ofphotolithography process. The light guide may be an optically clear(light transmissive) substrate, such as glass or a transparent plastic.For example, the light guide may be PMMA (acrylic), PETG, PS(polystyrene), or PC (polycarbonate).

An initial step in the subject photolithography process is the formationof emission points. The emission points may be permanent or temporary,and may be light refracting, light diffusing, or light reflecting, wherethe emission points may be on at least one surface of light guide. Thepattern of emission points may be used to frustrate photoresist-curativelight, which is present within the light guide due to total internalreflection. In this regard, the photoresist-curative light isedge-injected into the light guide and redirected so that it is emittedonto the surface of the photoresist.

The emission points may be of a material, and/or geometry, that causes aportion of the photoresist-curative light within the light guide toexceed the critical angle needed to maintain total internal reflection.As a result, the photoresist receives the photoresist-curative light atregions directly above the pattern of light emissive points, and thephotoresist may be developed to form a pattern of voids in thephotoresist at regions corresponding to the light emissive points. Thephotoresist may be a negative photoresist or positive photoresist, forexample.

FIG. 2A illustrates a device 200 that provides for the emission ofphotoresist-curative electromagnetic radiation by frustration of totalinternal reflection caused by a pattern of emission points, where thephotoresist-curative electromagnetic radiation may impinge upon aphotoresist.

The device 200 includes a light guide 110. The light guide 110 includesa pattern of emission points 210. The emission points 210 may be lightrefracting, light diffusing, or light reflecting, for example. Forexample, the pattern of light emission points 210 may be a lightdiffusing layer 124 as shown in FIG. 1 .

Referring to FIG. 2A, the light device 200 further includes a lightsource 230 configured to emit photoresist-curative electromagneticradiation. The light guide 110 is arranged to receive thephotoresist-curative electromagnetic radiation from the light source 230and to guide the received radiation by total internal reflection. Thelight guide 110 includes a pattern of emission points 210 on at leastone surface of the light guide 110.

The emission points 210 emit the photoresist-curative electromagneticradiation by frustration of total internal reflection caused by theemission points 210. A light ray 132 is emitted from the light source230 and directed into the light guide 110 at an angle such that thelight ray 132 impinging on a front surface 140 or back surface 142 ofthe light guide undergoes total internal reflection, and the light ray132 stays within the light guide 110. The light source 210 may directphotoresist-curative electromagnetic radiation into the light guide 110by edge injection into an edge 250 of the light guide 110. If theemission points 210 are part of a light diffusing layer 124, the lightdiffusing layer 124 may be chosen to be made of a light diffusingmaterial which has an index of refraction such that when the light ray132 originally emitted from the light source 130 impinges on an emissionpoints 210, total internal reflection does not occur, and the light ray132 exits the light guide 110 at the emission points 210. The exitinglight ray 132 impinges on corresponding regions of a photoresist 240disposed on the light guide 110. The photoresist 240 is then developedto form a patterned photoresist 245 as shown in FIG. 2B, where thepatterned photoresist 245 has a pattern of wells 242 formed in thepatterned photoresist 245 exposing the light guide 110. The photoresist240 may have an index of refraction less than that of the light guide110 so that the photoresist 240 acts as an optical cladding to totallyinternally reflect the photoresist-curative electromagnetic radiation atthe interface between the light guide 110, other than at the emissionpoints 210, and the photoresist 240.

The light source 230 is configured to emit photoresist-curativeelectromagnetic radiation. If the photoresist is UV curable, forexample, the light source 230 would be configured to emit UV light.Alternatively, the photoresist may be visible light curable. The lightsource 230 may be the same as the light source 130 of the device in FIG.1A. Alternatively, the light source 230 may be removed from the lightguide 110 after exposing the photoresist 240 to photoresist-curativeelectromagnetic radiation, and subsequent replaced with the light source130, which may emit light in a different wavelength range than the lightsource 230.

The emission points 210 may be light diffusing material. Alternatively,the emission points 210 may be light refracting. For example, theemission points 210 may be formed as lenses imprinted on a surface ofthe light guide 110.

The emission points 210 may be formed in any way to provide afrustration of total internal reflection at the emission points of thephotoresist-curative electromagnetic radiation being guided in the lightguide 110. The emission points 210 may be formed as a roughened surfaceof the light guide 110. In this regard the emission points 210 may beformed by etching or laser ablation, for example. The etching may be wetor dry etching, for example. The dry etching may be reactive ion etchingfor example. The emission points 210 may be formed as an implantedregion on the surface of the light guide 110. For example, the surfaceof the light guide 110 may be implanted with metal ions. The emissionpoints 210 may be formed as a deposited light diffusing region. Forexample, the emission points 210 may be formed by depositing a metaloxide on the light guide 110.

FIG. 3 illustrates a device 300 according to at least one embodiment.The at least one embodiment of FIG. 3 is similar to that of FIG. 2B,except that the light guide 110 has a film 112 formed on the light guide110, where the emission points 210 are formed in the film 112. Thephotoresist 240 is then developed to form a patterned photoresist 245 asshown in FIG. 3 , where the patterned photoresist 245 has a pattern ofwells 242 formed in the patterned photoresist 245 exposing the lightguide 110. The film 112 may have an index of refraction less than thatof the light guide 110 so that the film 112 acts as an optical claddingto totally internally reflect the photoresist-curative electromagneticradiation at the interface between the light guide 110, other than atthe emission points 210, and the film 112. Thus, even if the photoresistdoes not function as an optical cladding, the film 112 may function as acladding

FIGS. 4 and 5 are comparative examples, corresponding to FIGS. 2B and 3, respectively, of devices which do not allow for frustration of totalinternal reflection in a light guide 110 at selected points. Inparticular, the device 400 of FIG. 4 , and the device 500 of FIG. 5, donot have the emission points of FIGS. 2A and 3 . Thus, a light ray 132from the light source 230 is totally internally reflected along theentire light guide 100.

FIG. 6 illustrates a device 600 according to at least one embodiment.The at least one embodiment of FIG. 6 is similar to that of FIG. 2B,except that in FIG. 2B the emission points 210 are formed on the frontsurface 140 (first surface) of the light guide 110 upon which thephotoresist 240 is disposed, while in FIG. 6 the emission points 210 areformed on the back surface 142 (second surface) of the light guide 110opposite to the front surface 140 (first surface) of the light guide 110upon which the photoresist 240 is disposed.

The emission points 210 are of a material and geometry in FIG. 6 so thatphotoresist-curative electromagnetic radiation from the light source 230is subject to frustration of total internal reflection at the emissionpoints 210 and is directed back from the back surface 142 to the frontsurface 140 and exits the front surface 140 to impinge upon thephotoresist 240. Subsequently, the photoresist is patterned to form apatterned photoresist 245 as shown in FIG. 6 . The patterned photoresist245 has a pattern of wells 242 formed in the patterned photoresist 245exposing the light guide 110.

FIG. 7 illustrates a device 700 according to at least one embodiment.The at least one embodiment of FIG. 7 is similar to that of FIG. 3 ,except that in FIG. 3 the emission points 210 are formed on the film 112on the front surface 140 (first surface) of the light guide 110 uponwhich the photoresist 240 is disposed, while in FIG. 7 the emissionpoints 210 are formed on the film 112 on the back surface 142 (secondsurface) of the light guide 110 opposite to the front surface 140 (firstsurface) of the light guide 110 upon which the photoresist 240 isdisposed.

The emission points 210 are of a material and geometry in FIG. 7 so thatphotoresist-curative electromagnetic radiation from the light source 230is subject to frustration of total internal reflection at the emissionpoints 210 and is directed back from the film 112 on the back surface142 to the front surface 140, and exits the front surface 140 to impingeupon the photoresist 240. Subsequently, the photoresist is patterned toform a patterned photoresist 245 as shown in FIG. 7 . The patternedphotoresist 245 has a pattern of wells 242 formed in the patternedphotoresist 245 exposing the light guide 110.

Further in FIG. 7 the film 112 may be adhered to the light guide 110 viaan adhesive layer 114. Alternatively, the film 112 may directly contactthe light guide 110.

Once the photoresist 240 is patterned into the patterned photoresist 245according to any of the devices of FIG. 2B, 3, 6 or 7 to form thepatterned photoresist 245 with a pattern of wells 242 formed in thepatterned photoresist 245 exposing the light guide 110, furtherprocessing to form the device is performed. For example, the patternedphotoresist 245 may be used to perform subsequent material depositionprocesses to form a light-manipulative material into the pattern ofwells 242. Such processes include material deposition, nanoimprintingfollowed by nanoassembly, laser micro-machining followed by materialdeposition, and coating or plating processes.

For example, starting with the device of FIG. 2B with the patternedphotoresist 245, the pattern of emission points 210 may be a lightdiffusing layer 124, such as shown in FIG. 1A. Alternatively, the lightdiffusion layer 124 may be formed at the pattern of emission points 210using the patterned photoresist 245 as a mask, by etching, laserablation, implantation, or diffusing film deposition. The deposition ofthe light diffusing layer 124 may be performed using any coating capableof producing a light diffusing layer within the well 242, includingcoatings that contain light diffusing particles/pigments and/or coatingsin which the light diffusing layer 124 can be induced by subsequentlight exposure, or other means, such as a photographic coating.

Once the light diffusing layer 124 is formed, the light reflecting layer122 may be formed on the light diffusing layer 124, such as, forexample, as shown in FIG. 8 . For example, the light reflecting layer122 may be formed by deposition of a reflecting material on the lightdiffusing layer 124. The deposited reflecting material may be formed tocontact the light diffusing layer 124 only at the pixel wells 242 wherethe light guide 110 is exposed by the patterned resist 240. Thus, thelight reflecting layer 122 is formed on the light diffusing layer 124only at the pixel wells 210.

The light reflecting layer 122 may be formed, for example, by sputterdeposition of a metal. For example, Aluminum may be deposited as thelight reflecting layer 122. An example of a light reflecting layer 122,capable of reflecting 99.99% of incidental light, would be 400 Angstromsof Aluminum applied by magnetron sputter coating.

Referring to FIG. 1A, following the deposition of the light reflectinglayer 124 the remaining patterned photoresist 240 is stripped or liftedoff from the surface of the light guide 110, for example, using astripping agent that is compatible with the utilized photoresist.

The embodiments of the inventive concepts disclosed herein have beendescribed in detail with particular reference to preferred embodimentsthereof, but it will be understood by those skilled in the art thatvariations and modifications can be effected within the spirit and scopeof the inventive concepts.

Embodiments of the inventive concepts disclosed herein have beendescribed with reference to drawings. The drawings illustrate certaindetails of specific embodiments that implement systems and methods ofthe present disclosure. However, describing the embodiments withdrawings should not be construed as imposing any limitations that may bepresent in the drawings.

The foregoing description of embodiments has been presented for thepurposes of illustration and description. It is not intended to beexhaustive or to limit the subject matter to the precise form disclosed,and modifications and variations are possible in light of the aboveteachings or may be acquired from practice of the subject matterdisclosed herein. The embodiments were chosen and described in order toexplain the principals of the disclosed subject matter and its practicalapplication to enable one skilled in the art to utilize the disclosedsubject matter in various embodiments with various modification as aresuited to the particular use contemplated. Other substitutions,modifications, changes and omissions may be made in the design,operating conditions and arrangement of the embodiments withoutdeparting from the scope of the presently disclosed subject matter.

What is claimed is:
 1. A device comprising: a light source configured toemit photoresist-curative electromagnetic radiation; and a light guidearranged to receive the photoresist-curative electromagnetic radiationfrom the light source and to guide the received radiation by totalinternal reflection, the light guide including a pattern of emissionpoints on at least one surface of the light guide, the emission pointsemitting the photoresist-curative electromagnetic radiation out of thelight guide by frustration of total internal reflection caused by theemission points, wherein the emission points include an implanted regionof the at least one surface.
 2. The device of claim 1, wherein thephotoresist-curative electromagnetic radiation is ultraviolet (UV)light.
 3. The device of claim 1, where the emission points comprise alight diffusing layer or a lens imprinted on the at least one surface ofthe light guide.
 4. The device of claim 1, further including aphotoresist disposed on a first surface of the light guide, the emissionpoints formed on the first surface, wherein portions of thephotoresist-are cured by the photoresist-curative electromagneticradiation emitted at the emission points.
 5. The device of claim 1,wherein the light source is arranged to inject the photoresist-curativeelectromagnetic radiation into an edge of the light guide.
 6. A devicecomprising: a light source configured to emit photoresist-curativeelectromagnetic radiation; and a light guide arranged to receive thephotoresist-curative electromagnetic radiation from the light source andto guide the received radiation by total internal reflection, the lightguide including a pattern of emission points on at least one surface ofthe light guide, the emission points emitting the photoresist-curativeelectromagnetic radiation out of the light guide by frustration of totalinternal reflection caused by the emission points, wherein the depositedlight diffusing region includes a metal oxide.
 7. The device of claim 6,wherein the photoresist-curative electromagnetic radiation isultraviolet (UV) light
 8. The device of claim 6, where the emissionpoints comprise a light diffusing layer or a lens imprinted on the atleast one surface of the light guide.
 9. The device of claim 6, furtherincluding a photoresist disposed on a first surface of the light guide,the emission points formed on the first surface, wherein portions of thephotoresist are cured by the photoresist-curative electromagneticradiation emitted at the emission points.
 10. The device of claim 6,wherein the light source is arranged to inject the photoresist-curativeelectromagnetic radiation into an edge of the light guide.
 11. A devicecomprising: a light source configured to emit photoresist-curativeelectromagnetic radiation; and a light guide arranged to receive thephotoresist-curative electromagnetic radiation from the light source andto guide the received radiation by total internal reflection, the lightguide including a pattern of emission points on at least one surface ofthe light guide, the emission points emitting the photoresist-curativeelectromagnetic radiation out of the light guide by frustration of totalinternal reflection caused by the emission points, and a photoresistdisposed on a first surface of the light guide, the emission pointsformed on a second surface of the light guide opposite to the firstsurface, wherein portions of the photoresist-are cured by thephotoresist-curative electromagnetic radiation emitted at the emissionpoints
 12. The device of claim 11, wherein the photoresist-curativeelectromagnetic radiation is ultraviolet (UV) light.
 13. The device ofclaim 11, where the emission points comprise a light diffusing layer ora lens imprinted on the at least one surface of the light guide.
 14. Thedevice of claim 11, further including a photoresist disposed on a firstsurface of the light guide, the emission points formed on the firstsurface, wherein portions of the photoresist-are cured by thephotoresist-curative electromagnetic radiation emitted at the emissionpoints.
 15. The device of claim 11, wherein the emission points includeone of a roughened surface of the at least one surface or an implantedregion of the at least one surface.
 16. A device comprising: a lightsource configured to emit photoresist-curative electromagneticradiation; and a light guide arranged to receive thephotoresist-curative electromagnetic radiation from the light source andto guide the received radiation by total internal reflection, the lightguide including a film on at least one surface of the light guide, thefilm having a pattern of emission points, the emission points emittingthe photoresist-curative electromagnetic radiation out of the lightguide by frustration of total internal reflection caused by the emissionpoints; and a photoresist disposed on a first surface of the lightguide, the emission points formed on the film on a second surface of thelight guide opposite to the first surface, wherein portions of thephotoresist-are cured by the photoresist-curative electromagneticradiation emitted at the emission points.
 17. The device of claim 16,wherein the film has an index of refraction less than that of the lightguide such that the film acts as an optical cladding to internallyreflect the photoresist-curative electromagnetic radiation at aninterface between the film, other than at the emission points, and thefilm.
 18. The device of claim 16, wherein the photoresist-curativeelectromagnetic radiation is ultraviolet (UV) light.
 19. The device ofclaim 16, wherein portions of the photoresist-are cured by thephotoresist-curative electromagnetic radiation emitted at the emissionpoints.
 20. The device of claim 16, wherein the deposited lightdiffusing region includes a metal oxide.